DATASHEET PDF
630.pdf
9A, 200V, 0.400 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power .eld effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
speci.ed level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17412.
Features
. 9A, 200V
. rDS(ON) = 0.400.
. Single Pulse Avalanche Energy Rated
. SOA is Power Dissipation Limited
. Nanosecond Switching Speeds
. Linear Transfer Characteristics
. High Input Impedance
. Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
