TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
2SK3561
2SK3561.pdf
Switching Regulator Applications
Low drain-source ON resistance: R = 0.75 (typ.)
DS (ON) High forward transfer admittance: |Y | = 6.5S (typ.)
fs
= 100 A (V = 500 V) Low leakage current: I
DSS DS
= 2.0~4.0 V (V = 10 V, I = 1 mA) Enhancement mode: V
th DS D
