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Home > Datasheet > BF998 Philip Silicon N-channel dual-gate MOS-FETs! New & Original part! Vast of stock! PDF Offer

BF998 Philip Silicon N-channel dual-gate MOS-FETs! New & Original part! Vast of stock! PDF Offer

Source: | Publishing Date:2007-09-07

Datasheet:BF998.pdf

DESCRIPTION
Depletion type field effect transistor in a plastic microminiature SOT143 or SOT143R package with source
and substrate interconnected. The transistors are protected against excessive input voltage surges by
integrated back-to-back diodes between gates and source.

FEATURES
· Short channel transistor with high forward transfer
admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
· VHF and UHF applications with 12 V supply voltage,such as television
tuners and professional communications equipment.

 
 

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