Datasheet: 
BFG135_3[1].pdf
DESCRIPTION
NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level.
The distribution of the active areas across the surface of the device gives an excellent temperature profile.
Contact person: Ling Zhou
Email: sales001@sumzi.com
MSN: sales001@sumzi.com
