Datasheet:
1N5819.pdf
Description
This series employs the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low-voltage, high?frequency inverters, free wheeling diodes, and
polarity protection diodes.
Features
- Extremely Low VF
- Low Stored Charge, Majority Carrier Conduction
- Low Power Loss/High Efficiency
- These are Pb-Free Devices*
Mechanical Characteristics:
- Case: Epoxy, Molded
- Weight: 0.4 Gram (Approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable - Lead Temperature for Soldering Purposes:
260C Max for 10 Seconds - Polarity: Cathode Indicated by Polarity Band
- ESD Ratings:Machine Model = C (>400 V)
Human Body Model = 3B (>8000 V)
Contact person:
Frances New
Phone:+86-755-81832961
Fax:+86-755-83299282
Email:sumzi@sumzi.com
MSN:sumzi-frances@msn.com
http://www.sumzi.com
