Datasheet:
ST13005.pdf
Features
●MEDIUM VOLTAGE CAPABILITY
● NPN TRANSISTORS
● LOW SPREAD OF DYNAMIC PARAMETERS
● MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
● VERY HIGH SWITCHING SPEED
● THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”)
APPLICATIONS:
● ELECTRONIC BALLASTS FOR
●FLUORESCENT LIGHTING
● SWITCH MODE POWER SUPPLIES
DESCRIPTION
The devices are manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
They use a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
Contact person:
Frances New
Phone:+86-755-81832961
Fax:+86-755-83299282
Email:sumzi@sumzi.com
MSN:sumzi-frances@msn.com
http://www.sumzi.com
