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3935
3-PHASE POWER MOSFET CONTROLLER
�� For Automotive Applications

Package JP, 48-Pin LQFP

Package LQ, 36-Pin SOIC

ABSOLUTE MAXIMUM RATINGS
Load Supply Voltages, VBAT, VDRAIN,
VBOOST, BOOSTD ... -0.6 V to 40 V
Output Voltage Ranges,
GHA/GHB/GHC, VGHX .. -4 V to 55 V
SA/SB/SC, VSX ............... -4 V to 40 V
GLA/GLB/GLC, VGLX.... -4 V to 16 V
CA/CB/CC, VCX .......... -0.6 V to 55 V
Sense Circuit Voltages,
CSP,CSN, LSS ............... -4 V to 6.5 V
Logic Supply Voltage,
VDD........................... -0.3 V to +6.5 V
Logic Input/Outputs and OVSET, BOOSTS,
CSOUT, VDSTH ......... -0.3 V to 6.5 V
Operating Temperature Range,
TA ........................... -40��C to +135��C
Junction Temperature, TJ ........... +150��C
Storage Temperature Range,
TS ........................... -55��C to +150��C
* Fault conditions that produce excessive
junction temperature will activate device
thermal shutdown circuitry. These conditions
can be tolerated, but should be avoided.

The A3935 is designed specifically for automotive applications that
require high-power motors. Each provides six high-current gate drive
outputs capable of driving a wide range of n-channel power MOSFETs.
A requirement of automotive systems is steady operation over a
varying battery input range. The A3935 integrates a pulse-frequency
modulated boost converter to create a constant supply voltage for
driving the external MOSFETs. Bootstrap capacitors are utilized to
provide the above battery supply voltage required for n-channel FETs.
Direct control of each gate output is possible via six TTL-compatible
inputs. A differential amplifier is integrated to allow accurate
measurement of the current in the three-phase bridge.
Diagnostic outputs can be continuously monitored to protect the
driver from short-to-battery, short-to-supply, bridge-open, and battery
under/overvoltage conditions. Additional protection features include
dead-time, VDD undervoltage, and thermal shutdown.
The A3935 is supplied in a choice of two packages, a 48-lead low
profile QFP with exposed thermal pad (suffix JP) and a 36-lead 0.8 mm
pitch SOIC (suffix LQ).

FEATURES
􀂄 Drives wide range of n-channel MOSFETs in 3-phase bridges
􀂄 PFM boost converter for use with low-voltage battery supplies
􀂄 Internal LDO regulator for gate-driver supply
􀂄 Bootstrap circuits for high-side gate drivers
􀂄 Current monitor output
􀂄 Adjustable battery overvoltage detection
􀂄 Diagnostic outputs
􀂄 Motor lead short-to-battery, short-to-ground, and
bridge-open protection
􀂄 Undervoltage protection
􀂄 -40 ��C to +150 ��C, TJ operation
􀂄 Thermal shutdown