Production£º

Datasheet:ST13005.pdf

Features

¡ñMEDIUM VOLTAGE CAPABILITY
¡ñ NPN TRANSISTORS
¡ñ LOW SPREAD OF DYNAMIC PARAMETERS
¡ñ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
¡ñ VERY HIGH SWITCHING SPEED
¡ñ THROUGH-HOLE I2PAK (TO-262) POWER  PACKAGE IN TUBE (SUFFIX ¡±-1¡±)

APPLICATIONS:
¡ñ ELECTRONIC BALLASTS FOR
¡ñFLUORESCENT LIGHTING
¡ñ SWITCH MODE POWER SUPPLIES

DESCRIPTION
The devices are manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
They use a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.

Contact person:

Frances New

Phone:+86-755-81832961

Fax:+86-755-83299282

Email:sumzi@sumzi.com

MSN:sumzi-frances@msn.com

http://www.sumzi.com