Production£º

Datasheet:LF357H.pdf

General Description

These are the first monolithic JFET input operational amplifiers to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology).
These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

Features Advantages

• Replace expensive hybrid and module FET op amps
• Rugged JFETs allow blow-out free handling compared with MOSFET input devices
• Excellent for low noise applications using either high or low source impedance¡ªvery low 1/f corner
• Offset adjust does not degrade drift or common-mode rejection as in most monolithic amplifiers
• New output stage allows use of large capacitive loads (5,000 pF) without stability problems
• Internal compensation and large differential input voltage capability
  

Applications

• Precision high speed integrators
• Fast D/A and A/D converters
• High impedance buffers
• Wideband, low noise, low drift amplifiers
• Logarithmic amplifiers
• Photocell amplifiers
• Sample and Hold circuits
  

Contact person:

Frances New

Phone:+86-755-81832961

Fax:+86-755-83299282

Email:sumzi@sumzi.com

MSN:sumzi-frances@msn.com

http://www.sumzi.com