Production£º

Datasheet: BFG135_3[1].pdf

DESCRIPTION

NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level.
The distribution of the active areas across the surface of the device gives an excellent temperature profile.

Contact person:

Frances New

Phone:+86-755-81832961

Fax:+86-755-83299282

Email:sumzi@sumzi.com

MSN:sumzi-frances@msn.com

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