Production£º

¡¾Part No.¡¿     IRFP250N
¡¾Category¡¿   N-Channel HEXFET Power MOSFET
¡¾Packing¡¿    TO-247AC
¡¾MFQ¡¿           IR
¡¾Datasheet¡¿IRFP250N datasheet

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area.  This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for  commercial-industrial applications where
higher power levels preclude the use of TO-220 devices.  The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.

Features

• Advanced Process Technology
• Dynamic dv/dt Rating
• 175¡ãC Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements

Contact person:

Frances New

Phone:+86-755-81832961

Fax:+86-755-83299282

Email:sumzi@sumzi.com

MSN:sumzi-frances@msn.com

http://www.sumzi.com