Production£º

¡¾Part No.¡¿   TLP627-4
¡¾Category¡¿ GaAs IRED & PHOTO-TRANSISTOR
¡¾Packing¡¿    DIP
¡¾MFQ¡¿           Toshiba
¡¾Datasheet¡¿TLP627-4 datasheet

Description

The TOSHIBA TLP627,-2 and -4 consists of a gallium arsenide infrared
emitting diode optically coupled to a darlington connected phototransistor
which has an integral base-emitter resistor to optimize switching speed and
elevated temperature characteristics.
The TLP627-2 offers two isolated channels in a eight lead plastic DIP,
while the TLP627-4 provide four isolated channels per package.  

Features

• Collector-Emitter Voltage                  : 300V(Min)
• Current Transfer Ratio                  : 1000%(Min)
• Isolation Voltage                       : 5000Vrms(Min)
• UL Recognized                        : UL1577,File No.E67349