Production£º

¡¾Part No.¡¿   FDV304P
¡¾Category¡¿ Digital FET, P-Channel
¡¾Packing¡¿   SOT-23
¡¾MFQ¡¿        Fairchild
¡¾Datasheet¡¿FDV304P datasheet

General Description                                                                  

This P-Channel  enhancement mode  field effect transistors is
produced using Fairchild's proprietary, high cell density, DMOS
technology. This very high density process is tailored to minimize
on-state resistance at low gate drive conditions. This device is
designed especially for application in battery power applications
such as notebook computers and cellular phones. This device
has excellent on-state resistance even at gate drive voltages as
low as 2.5 volts

Features

• -25 V, -0.46 A continuous, -1.5 A Peak.
  RDS(ON)= 1.1 W @ VGS = -4.5 V  
  RDS(ON) = 1.5 W @ VGS= -2.7 V. 
• Very low level gate drive requirements allowing  direct
  operation in 3V circuits. VGS(th) < 1.5V
• Gate-Source Zener for ESD ruggedness.>6kV Human Body Model
• Compact industry standard SOT-23 surface  mount package.

Contact person:

Frances New

Phone:+86-755-81832961

Fax:+86-755-83299282

Email:sumzi@sumzi.com

MSN:sumzi-frances@msn.com

http://www.sumzi.com