Production£º

¡¾Part No.¡¿   IRF640NPBF
¡¾Category¡¿  200V Single N-Channel HEXFET Power MOSFET
¡¾Packing¡¿   TO-220AB
¡¾MFQ¡¿         IR
¡¾Datasheet¡¿IRFN640PBF datasheet

Description

Fifth Generation  HEXFET  Power MOSFETs  from
International Rectifier utilize advanced processing
techniques to achieve extremely low  on-resistance per
silicon area.  This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.

The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts.  The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.

The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package.

TheD2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF640NL) is available for low-
profile application.

Features

• Advanced Process Technology
• Dynamic dv/dt Rating
• 175 degree Operating Temperatur
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements

Contact person:

Frances New

Phone:+86-755-81832961

Fax:+86-755-83299282

Email:sumzi@sumzi.com

MSN:sumzi-frances@msn.com

http://www.sumzi.com