TDK, IBM form R&D partnership on MRAM

IBM and TDK Corp. have announced a joint R&D program focused on high-capacity MRAM technology using the spin momentum transfer effect. According to the announcement, the two companies believe that harnessing the spin momentum transfer effect will allow a much more compact memory cell than is possible with present approaches.

The companies will leverage their respective expertise in areas of fundamental research for new memory technology and magnetic device development to create a high-density, high-capacity MRAM ICs that can be used as standalone memory or embedded into other IC solutions.

"This collaborative initiative reinforces IBM's commitment to explore new phenomena for memory applications," said T.C. Chen, VP for science and technology, IBM Research. "The project will focus on creating and demonstrating advanced magnetic materials in demanding memory chip designs."

"This joint research and development will broaden the application of magnetic materials, which has been TDK's core technology since 1935," said Minoru Takahashi, TDK CTO.

IBM has been involved in the development of MRAM technology and is a pioneer in the fundamental research on the magnetic tunnel junction (MTJ) and in the study of the spin momentum transfer effect, upon which the memory is based. TDK, meanwhile, has applied MTJ technology into recording heads for HDDs.