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当前位置：BF998 Philip Silicon N-channel dual-gate MOS-FETs! New & Original part! Vast of stock! PDF Offer
发布时间：2009-04-09 浏览：4944次
Datasheet:
BF998.pdf
DESCRIPTION
Depletion type field effect transistor in a plastic microminiature SOT143 or SOT143R package with source
and substrate interconnected. The transistors are protected against excessive input voltage surges by
integrated back-to-back diodes between gates and source.
FEATURES
· Short channel transistor with high forward transfer
admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
· VHF and UHF applications with 12 V supply voltage,such as television
tuners and professional communications equipment.
BF998.pdfDESCRIPTION
Depletion type field effect transistor in a plastic microminiature SOT143 or SOT143R package with source
and substrate interconnected. The transistors are protected against excessive input voltage surges by
integrated back-to-back diodes between gates and source.
FEATURES
· Short channel transistor with high forward transfer
admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
· VHF and UHF applications with 12 V supply voltage,such as television
tuners and professional communications equipment.
