Cypress Introduces 4-Mbit nvSRAM Built On 0.13-Micron SONOS Process

nvSRAM Offers Best Solution for High-Speed, Non-Volatile Data
In Computing, Automotive, Industrial and Office Applications

SAN JOSE, Calif., October 15, 2007 - Cypress Semiconductor Corp. (NYSE: CY) today introduced a 4-Mbit non-volatile static random access memory (nvSRAM). The new device features access times as low as 15 ns, infinite read, write and recall cycles, and 20-year data retention, making it ideal for applications requiring continuous high-speed writing of data and absolute non-volatile data security including RAID applications, harsh environment industrial controls, and data logging functions in automotive, medical and data communications systems.

The nvSRAMs offer the best alternative for fast, non-volatile memory. They reduce board space and design complexity compared to battery-backed SRAMs, and are more economical and reliable than magnetic (MRAM) or ferroelectric (FRAM) memories. The new products are the latest in a series of nvSRAMs from Cypress, which include 256K- and 1-Mbit nvSRAM devices currently shipping in production volumes. Further introductions are expected in the first half of 2008.

The new 4-Mbit nvSRAMs are the first manufactured on Cypress's S8™ 0.13-micron SONOS (Silicon Oxide Nitride Oxide Silicon) embedded nonvolatile memory technology, enabling greater densities and improved access times and performance. A leader in SONOS process technology, Cypress will use the S8 technology in next generation PSoC® mixed-signal arrays, OvationONS™ laser navigation sensors, programmable clocks and other products. SONOS is highly compatible with standard CMOS technologies and offers numerous advantages including high endurance, low power, and radiation hardness. In addition, SONOS provides a more robust, manufacturable and cost-effective solution compared to other embedded non-volatile memory technologies.

"The nvSRAM melds two of Cypress's traditional strengths, SRAM and non-volatile memory, into a monolithic, high-performance solution required by many applications," said Robert Dunnigan, vice president of Non-Volatile Memory business unit at Cypress. "In addition, we offer the market's broadest distribution and best support for these products."

"This introduction represents a seminal touchpoint in Cypress's process development evolution," said Paul Keswick, Cypress's executive vice president of new product development. "We have turned our internal resources towards value-added, proprietary processes such as S8 that yield market-differentiated solutions. A number of important new products are under development using this process."

The 4-Mbit nvSRAM is available in either a 512-Kbit x 8 (CY14B104L) or 256-Kbit x 16 (CY14B104N) configuration. The devices are ROHS-compliant and directly replace SRAM, battery-backed SRAM, EPROM and EEPROM devices, offering reliable non-volatile data storage without batteries. Data transfers from the SRAM to the device's nonvolatile elements take place automatically at power down. On power up, data is restored to the SRAM from the nonvolatile memory. Both operations are also available under software control.