Microsemi Expands Power Module Portfolio for Solar Inverters

IRVINE, Calif., Oct 17, 2007 (PrimeNewswire via COMTEX News Network) -- Microsemi Corporation (Nasdaq:MSCC) a leading manufacturer of high performance analog mixed signal integrated circuits and high reliability semiconductors, has expanded its line of standard power modules for solar inverters with four new devices in compact SP4 and SP6-P packages.

All four modules feature a boost stage for input power conditioning, associated with a full bridge configuration, for unipolar switching. They combine low saturation "Trench & Field Stop" IGBT top switches that operate at line frequency with fast NPT IGBT bottom switches designed to switch in the 15 kHz to 50 kHz range.

"The introduction of these new power modules shows our commitment to support the solar market with unique products. The implementation of a boost stage, generating a regulated DC supply from the solar cells energy, to feed a full bridge configuration within the same module package achieves a highly integrated inverter power core from the solar panels input up to the inverter's output," said Serge Bontemps, Power Modules Products Development Director in Merignac, France. "These devices in the high power range, offer minimum losses for best system efficiency and size," he said.

As the previously introduced modules, the diodes in the full bridge section of the new devices are matched to the power transistors for improved solar inverter efficiency as well. High speed, soft recovery DQ series diodes are designed in parallel with the top IGBTs to provide low recovery losses in combination with the bottom fast IGBTs. Low forward voltage diodes protect the bottom IGBTs during output current zero crossings. Integrated thermal sensors monitor the module case for over-temperature protection for SP6-P modules.

These new Microsemi power modules include two 600V and two 1200V models. For each voltage rating the two lowest power devices are offered in the SP4 package while the two higher power ones are integrated in the very low profile, 12mm height, SP6-P housing. The Boost stage of the 600V products is made of COOLMOS(tm) devices while for 1200V modules it is featuring fast NPT IGBT's. In all cases, the boost diode is a high speed, soft recovery DQ type but SiC diode is possible as an option to further increase switching frequency or to reduce switching losses and disturbance.

The new boost stage + full bridge modules:

   Module           Full       Boost
                    Bridge     Technology  Voltage  Current Package   NTC
                    Technology
   APTGV50H60BG     Trench/NPT  COOLMOS     600V     50A      SP4     N/A
   APTGV100H60BTPG  Trench/NPT  COOLMOS     600V     100A     SP6-P   Yes
   APTGV25H120BG    Trench/NPT  IGBT        1200V    25A      SP4     N/A
   APTGV50H120BTPG  Trench/NPT  IGBT        1200V    50A      SP6-P   Yes