案例中心

\ News

Datasheet

当前位置:首页 > 案例中心 > Datasheet > 详情

LF357H NS Operational Amplifiers! Hot Offer! New original packing!

发布时间:2009-04-10 浏览:3818次

Datasheet:LF357H.pdf

General Description

These are the first monolithic JFET input operational amplifiers to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology).
These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

Features Advantages

  • Replace expensive hybrid and module FET op amps
  • Rugged JFETs allow blow-out free handling compared with MOSFET input devices
  • Excellent for low noise applications using either high or low source impedance—very low 1/f corner
  • Offset adjust does not degrade drift or common-mode rejection as in most monolithic amplifiers
  • New output stage allows use of large capacitive loads (5,000 pF) without stability problems
  • Internal compensation and large differential input voltage capability

Applications

  • Precision high speed integrators
  • Fast D/A and A/D converters
  • High impedance buffers
  • Wideband, low noise, low drift amplifiers
  • Logarithmic amplifiers
  • Photocell amplifiers
  • Sample and Hold circuits

 

Contact person:

Frances New

Phone:+86-755-81832961

Fax:+86-755-83299282

Email:sumzi@sumzi.com

MSN:sumzi-frances@msn.com

http://www.sumzi.com

 

案例中心|产品中心|解决方案|新闻资讯|合作伙伴|技术支持|联系我们
Copyright © 2002-2026 深圳响拇指电子科技有限公司 版权所有 粤ICP备11091659号 0755-83031813