50-V LDMOS device targets system-level power and cost for TV transmitters

The MRF6VP3450H 50-V laterally diffused MOS (LDMOS) RF power transistor is offered as providing 50% higher output power than competing UHF TV broadcast solutions and demonstrates an industry-leading RF figure of merit. The transistor delivers greater than 450-W peak power at P1dB with 50% efficiency throughout the UHF broadcast frequency band.

Based on a sixth-generation high-voltage 50-V LDMOS process technology, the RF power transistor is suited for TV transmitters employing both analog and digital modulation formats. It helps reduce cost by converting the required ac input-power into RF output power. Operating at 50 V and 90 W average DVB-T OFDM, it can survive all phase angles of a 10:1 VSWR. Similarly, it will survive the same mismatch operating at 450-W peak pulsed power (10-µs pulse, 2.5% duty cycle).

Designed to offer a combination of power, efficiency, and gain for any RF power transistor, it targets the 470 to 860-MHz TV broadcast frequencies. It uses a DVB-T 64 QAM OFDM signal at 90-W average output power with a typical 860-MHz 50-V performance, 28% drain efficiency, and 23-dB gain, with an adjacent channel power ratio (ACPR) at 4-MHz offset of -62 dBc in a 4-kHz bandwidth. The transistor can help ease the transition from analog to digital TV broadcast. (Contact company for pricing -- sampling available now, production by 3rd qtr.)