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TOSHIBA Field Effect Transistor  Silicon N Channel MOS Type (-MOSVI)
2SK3561
2SK3561.pdf

Switching Regulator Applications 
 
 
   Low drain-source ON resistance: R  = 0.75 (typ.)
DS (ON)  High forward transfer admittance: |Y | = 6.5S (typ.)
fs
 = 100 A (V  = 500 V)   Low leakage current: I
DSS DS
 = 2.0~4.0 V (V  = 10 V, I  = 1 mA)   Enhancement mode: V
th DS D