NXP BF998 Silicon N-channel dual-gate MOS-FETs

Datasheet:BF998.pdf

FEATURES

• Short channel transistor with high forward transfer
admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz.

APPLICATIONS

• VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.

DESCRIPTION

Depletion type field effect transistor in a plastic
microminiature SOT143 or SOT143R package with source
and substrate interconnected. The transistors are
protected against excessive input voltage surges by
integrated back-to-back diodes between gates and
source.

Contact person:

Frances New

Phone:+86-755-81832961

Fax:+86-755-83299282

Email:sumzi@sumzi.com

MSN:sumzi-frances@msn.com

http://www.sumzi.com