1N5819 ON SCHOTTKY BARRIER RECTIFIERS!

Datasheet:1N5819.pdf

Description

This series employs the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low-voltage, high?frequency inverters, free wheeling diodes, and
polarity protection diodes.

Features

• Extremely Low VF
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• These are Pb-Free Devices*

Mechanical Characteristics:

• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
  Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
  260C Max for 10 Seconds
• Polarity: Cathode Indicated by Polarity Band
• ESD Ratings:Machine Model = C (>400 V)
  Human Body Model = 3B (>8000 V)

Contact person:

Frances New

Phone:+86-755-81832961

Fax:+86-755-83299282

Email:sumzi@sumzi.com

MSN:sumzi-frances@msn.com

http://www.sumzi.com