供应热卖现货 FDV301N 场效应管

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发布时间：2009-04-09 浏览：4988次

FDV301N 型号
FDV301N 类型绝缘栅型场效应管
FDV301N 应用广泛应用于电源方面
FDV301N 批号 06+ROHS
FDV301N 数量大量现货
FDV301N 封装 SOT-23
FDV301N 包装 3000PCS/盘
FDV301N 厂家 Fairchild仙童
FDV301N 备注 FDV301N场效应管，25V/0.22A，全新原装现货，拥有大量库存现货，详情欢迎来电咨询！！！

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FDV301N
Digital FET , N-Channel

Features特点
25 V, 0.22 A continuous, 0.5 A Peak.
RDS(ON) = 5 W @ VGS= 2.7 V
RDS(ON) = 4 W @ VGS= 4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. VGS(th) < 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace multiple NPN digital transistors with one DMOS
FET.

General Description概述
This N-Channel logic level enhancement mode field effect
transistor is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This
device has been designed especially for low voltage
applications as a replacement for digital transistors. Since
bias resistors are not required, this one N-channel FET can
replace several different digital transistors, with different bias
resistor values.