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IntelCorp. has validated Hynix SemiconductorInc.'s 50nm-class process technology 1Gbit DDR2 DRAM, which increased production efficiency to 50 percent over its 60nm-class process technology.

The South Korean company adopted "three-dimensional transistor" architecture and "W-DPG (Dual Poly Gate)" technology that significantly minimize leakage to further reduce overall power consumption and increase performance by optimizing its speed. The adoption of technologies will be extended to DDR3DRAM.

As the demand for higher capacity memory is expected to grow, Hynix plans to enhance capacity on the 50nm-class products to suit market needs. Hynix's 50nm-class DDR2 DRAM processing technology will be also used in producing various applications not only mass storagePC DRAM but also Graphic DRAM, Mobile DRAM.

Mass production of validated 1Gbit DDR2 DRAM as well as DDR3 products will begin in the 2H 2008.