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The components are targeted at data-intensive computing applications including PC gaming and super computing.

According to Micron, the 1 Gb DDR3 products provide the lowest cost-per-bit tool available on its 78 nanometer (nm) 6F2 process, have a smaller die size premium over double data rate 2 (DDR2) compared with 512 Mb products, offer lower power on modules that can use 512 Mb or 1 Gb and meet the minimum system density requirements of 1 GB.

"Micron DDR3 memory technology is the next step in the evolution of DDR ¡­ SDRAM [synchronous dynamic random access memory] technology," said Pete MacWilliams, senior fellow, Intel Corp.

"DDR3 memory technology provides increased bandwidth, lower power and better signal integrity to support Intel platforms in 2007 and beyond."

The Micron DDR3 products support data rates of 800 megatransfers per second (MT/s) to 1,066 MT/s with clock frequencies of 400 MHz to 533 MHz, respectively, doubling the speed from DDR2. The DDR3 supply voltage has been reduced from 1.8 volts (V) to 1.5V, reducing power consumption by up to 30%.

Evaluation samples of the 1Gb DDR3 components are available to select customers with production expected to begin early next year.

The components will be available in various output configurations (x4, x8 and x16) and will comply with the most recent Joint Electron Device Engineering Council (JEDEC) DDR3 specifications.

These components will support module densities from 512 MB through 4 GB and a variety of module types including unregistered dual in-line memory modules (UDIMMs), small outline dual in-line memory modules (SODIMMs) and registered dual in-line memory modules (RDIMMs).

Micron said a 2 Gb DDR3 device is also expected to be available early next year for even higher density applications.