IRF840 ¼¼Êõ×ÊÁϼ°±¨¼Û(¸½PDFÎĵµ)

DATASHEET PDF840.pdf
8A, 500V, 0.850 Ohm, N-Channel Power

MOSFET

This N-Channel enhancement mode silicon gate power field

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a specified level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA17425.

Features

• 8A, 500V

• rDS(ON) = 0.850Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature