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5.5A, 400V, 1.000 Ohm, N-Channel Power

MOSFET

This is an N-Channel enhancement mode silicon gate power

field effect transistor. It is an advanced power MOSFET

designed, tested, and guaranteed to withstand a specified

level of energy in the breakdown avalanche mode of

operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. These types can be operated directly

from integrated circuits.
Formerly developmental type TA17414

Features

• 5.5A, 400V

• rDS(ON) = 1.000Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 ¡°Guidelines for Soldering Surface Mount

Components to PC Boards¡±