Production:
【Part No.】 BF998
【Category】 Silicon N-channel dual-gate MOS-FETs
【Packing】 SOT143/SOT143R
【MFQ】 Philip
【Datasheet】BF998 Datasheet
DESCRIPTION
Depletion type field effect transistor in a plastic microminiature SOT143 or SOT143R package with source
and substrate interconnected. The transistors are protected against excessive input voltage surges by
integrated back-to-back diodes between gates and source.
FEATURES
· Short channel transistor with high forward transfer
admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
· VHF and UHF applications with 12 V supply voltage,such as television
tuners and professional communications equipment.
Contact person:
Frances New
Phone:+86-755-81832961
Fax:+86-755-83299282
Email:sumzi@sumzi.com
MSN:sumzi-frances@msn.com
http://www.sumzi.com